Published April 2014 | Version v1
Journal article

Improved theoretical model of InN optical properties

  • 1. Institute of Physics, Universidade Federal da Bahia, Salvador, BA, 40210-340 (Brazil)
  • 2. Institute of Physics, Universidade de Sao Paulo, SP, 05315-970 (Brazil)
  • 3. Naval Research Laboratory, Washington, DC, 20375 (United States)
  • 4. Department of Materials Science and Engineering, Royal Institute of Technology, 100 44 Stockholm (Sweden)
  • 5. Department of Physics, University of Oslo, 0316 Oslo (Norway)

Description

The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GWo). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201300521

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
11
Journal Issue
3-4
Journal Page Range
p. 581-584
ISSN
1610-1642

Conference

Title
10. International conference on nitride semiconductors (ICNS-10)
Dates
25-30 Aug 2013
Place
Washington, DC (United States)

Optional Information

Notes
With 5 figs., 17 refs.