Published January 2013 | Version v1
Journal article

Quantifying the low-energy limit and spectral resolution in valence electron energy loss spectroscopy

  • 1. Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)
  • 2. Department of Chemical Engineering and Materials Science, University of California Davis, One Shields Ave, Davis, CA 95618 (United States)
  • 3. SuperSTEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom)
  • 4. Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf (Switzerland)
  • 5. Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, WA 99352 (United States)
  • 6. Department of Molecular and Cellular Biology, University of California Davis, One Shields Ave, Davis, CA 95618 (United States)

Description

While the development of monochromators for scanning transmission electron microscopes (STEM) has improved our ability to resolve spectral features in the 0–5 eV energy range of the electron energy loss spectrum, the overall benefits relative to unfiltered microscopes have been difficult to quantify. Simple curve fitting and reciprocal space models that extrapolate the expected behavior of the zero-loss peak are not enough to fully exploit the optimal spectral limit and can hinder the ease of interpreting the resulting spectra due to processing-induced artifacts. To address this issue, here we present a quantitative comparison of two processing methods for performing ZLP removal and for defining the low-energy spectral limit applied to three microscopes with different intrinsic emission and energy resolutions. Applying the processing techniques to spectroscopic data obtained from each instrument leads in each case to a marked improvement in the spectroscopic limit, regardless of the technique implemented or the microscope setup. The example application chosen to benchmark these processing techniques is the energy limit obtained from a silicon wedge sample as a function of thickness. Based on these results, we conclude on the possibility to resolve statistically significant spectral features to within a hundred meV of the native instrumental energy spread, opening up the future prospect of tracking phonon peaks as new and improved hardware becomes available. -- Highlights: ► We examine and extrapolate spectral limits in EELS. ► We compare deconvolution and subtraction techniques. ► We probe the effect of sample thickness on the spectral limit and distributions.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.ultramic.2012.08.010

Additional details

Identifiers

DOI
10.1016/j.ultramic.2012.08.010;
PII
S0304-3991(12)00214-8;

Publishing Information

Journal Title
Ultramicroscopy (Amsterdam)
Journal Volume
124
Journal Page Range
p. 130-138
ISSN
0304-3991
CODEN
ULTRD6

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45028057
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BENCHMARKS; COMPARATIVE EVALUATIONS; ENERGY RESOLUTION; ENERGY-LOSS SPECTROSCOPY; PHONONS; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VALENCE
Descriptors DEC
ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; EVALUATION; MICROSCOPY; QUASI PARTICLES; RESOLUTION; SEMIMETALS; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.