Published 1991
| Version v1
Journal article
Intermediate crystallization of ion-amorphizated silicon during nanosecond laser annealing
Creators
Description
Main results of studying peculiarities of laser annealing of implanted. It is found that intermediate crystallization of ion-amorphizated silicon by nanosecond laser annealing may be nonoriented liquid-phase one leading to fine-grained semicrystal formations as well as epitaxial one, depending on the implanted layer initial structure state
Additional details
Additional titles
- Original title (Russian)
- Промежуточная кристаллизация ионно-аморфизированного кремния в процессе наносекундного лазерного отжига
Publishing Information
- Journal Title
- Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 61
- Journal Issue
- 1
- Journal Page Range
- p. 195-197.
- ISSN
- 0044-4642
- CODEN
- ZTEFA3
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24005328
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTALLIZATION; EPITAXY; ION IMPLANTATION; LASER RADIATION; SILICON
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS