Published July 7, 2016
| Version v1
Journal article
Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique
Creators
- 1. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
Description
Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.
Additional details
Identifiers
- DOI
- 10.1063/1.4955136;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 120
- Journal Issue
- 1
- Journal Page Range
- vp.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48042517
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CARRIERS; CONNECTORS; DIFFUSION; DIFFUSION LENGTH; ELECTRON BEAMS; GALLIUM ARSENIDES; GOLD; NANOWIRES; N-TYPE CONDUCTORS; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CONDUCTOR DEVICES; DIMENSIONS; ELECTRICAL EQUIPMENT; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; LENGTH; LEPTON BEAMS; MATERIALS; METALS; MICROSCOPY; NANOSTRUCTURES; PARTICLE BEAMS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2016 Author(s)