Traveling heater method growth and characterization of CdMnTe crystals for radiation detectors
- 1. School of Materials Science and Engineering, Shanghai University, Nanchen Road 333, Shanghai 200444 (China)
Description
In this paper, the Cd0.9Mn0.1Te (CdMnTe) crystals were grown by the self-designed Traveling Heater Method (THM) crystal growth system. Two types of polycrystalline CdMnTe feed ingots synthesized in a traditional rocking furnace and in a vertical Bridgman furnace were adopted during the THM growth, and the as-grown crystals were denominated as CMT1 and CMT2, respectively. The crystal and detector properties, including the Te inclusions, Mn composition, PL spectrum, electrical and energy response properties were characterized. The results showed that the CMT2 ingot had less Te inclusion and more uniform Mn composition distribution along the ingot than CMT1 ingot. During the THM growth, the polycrystalline feed material synthesized by VB technique favoured a smooth and low concave growth interface, which decreased the formation of Te inclusions and Mn variation in the ingot. The resistivity of the CdMnTe crystal grown by THM was in the range of (0.5-4) x 1010 Ω.cm. The PL spectra indicated that CMT2 crystal possesses higher crystalline quality as compared to CMT1 crystal, with lower impurity concentration and defects. The fabrication CdMnTe single element planar detectors under the 59.5 keV 241Am radiation showed that the energy resolution of CMT1 and CMT2 crystals was 17.2% and 12.7%, respectively. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201510226Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 13
- Journal Issue
- 7-9
- Journal Page Range
- p. 408-412
- ISSN
- 1610-1642
Conference
- Title
- 17. International conference on II-VI compounds and related materials
- Acronym
- II-VI 2015
- Dates
- 13-18 Sep 2015
- Place
- Paris (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 47097625
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMERICIUM 241; CADMIUM TELLURIDES; CHEMICAL COMPOSITION; CONCENTRATION RATIO; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ENERGY RESOLUTION; GAMMA SPECTROSCOPY; HEATERS; IMPURITIES; INTERFACES; KEV RANGE 10-100; MANGANESE TELLURIDES; PHOTOLUMINESCENCE; RADIATION DETECTORS; X-RAY SPECTROSCOPY
- Descriptors DEC
- ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; AMERICIUM ISOTOPES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; EMISSION; ENERGY RANGE; HEAVY NUCLEI; ISOTOPES; KEV RANGE; LUMINESCENCE; MANGANESE COMPOUNDS; MEASURING INSTRUMENTS; NUCLEI; ODD-EVEN NUCLEI; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIOISOTOPES; RESOLUTION; SPECTROSCOPY; SPONTANEOUS FISSION RADIOISOTOPES; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- With 7 figs., 1 tab., 17 refs.