Published May 14, 2001
| Version v1
Journal article
Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 78
- Journal Issue
- 20
- Journal Page Range
- [10 p.]
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33037776
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALUMINIUM OXIDES; FILMS; NSLS; SEMICONDUCTOR JUNCTIONS; THICKNESS; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; DIMENSIONS; OXIDES; OXYGEN COMPOUNDS; RADIATION SOURCES; SYNCHROTRON RADIATION SOURCES
Optional Information
- Contract/Grant/Project number
- AC02-98CH10886
- Funding organization
- USDOE Office of Energy Research (ER) (United States)