Published February 1, 2005
| Version v1
Journal article
Improved adhesion of Au thin films to SiOx/Si substrates by dendrimer mediation
- 1. Center for Materials for Information Technology, University of Alabama, 205 Bevill Building, Tuscaloosa, AL 35487-0209 (United States)
- 2. Department of Chemistry, University of Alabama, 133 Lloyd Hall, Tuscaloosa, AL 35487-0336 (United States)
- 3. Center for Materials for Information Technology, University of Alabama, 205 Bevill Building, Tuscaloosa, AL 35487-0209 (United States) and Department of Metallurgical and Materials Engineering, University of Alabama, A129 Bevill Building, Tuscaloosa, AL 35487-0202 (United States)
Description
Quantitative evidence of significantly improved interfacial adhesion between Au films and SiOx/Si substrates induced by an organic dendrimer monolayer was presented. For dendrimer-mediated Au films, nanoscratch tests revealed a critical load that was two times higher than that for films without dendrimer mediation. Atomic force microscopy (AFM) examination of nanoindents revealed much constrained lateral flow of metals in the dendrimer-mediated Au films during nanoindentation, indicating enhanced adhesion due to the presence of the dendrimer layer
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2004.07.080;
- PII
- S0040-6090(04)01087-9;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 473
- Journal Issue
- 1
- Journal Page Range
- p. 164-168
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36112463
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADHESION; ATOMIC FORCE MICROSCOPY; LAYERS; SILICON; SILICON OXIDES; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.