Published July 24, 2006
| Version v1
Journal article
Low density InAs quantum dots grown on GaAs nanoholes
- 1. Physics Department, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Description
A growth technique combining droplet epitaxy and molecular beam epitaxy (MBE) is developed to obtain a low density of InAs quantum dots (QDs) on GaAs nanoholes. This growth technique is simple, flexible, and does not require additional substrate processing. It makes possible separate control of the QD density via droplet epitaxy and the QD quality via MBE growth. In this letter the authors report the use of this technique to produce InAs QDs with a low density of 2.7x108 cm-2 as well as good photoluminescence properties. The resulting samples are suitable for single QD device fabrication and applications
Additional details
Identifiers
- DOI
- 10.1063/1.2244043;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 89
- Journal Issue
- 4
- Journal Page Range
- p. 043113-043113.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38023568
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES
Optional Information
- Notes
- (c) 2006 American Institute of Physics