Published August 1, 2005
| Version v1
Journal article
Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films
- 1. Institut National de la Recherche Scientifique, INRS-Energie, Materiaux et Telecommunications, 1650, Boulevard Lionel-Boulet, C.P. 1020, Varennes, Quebec, J3X 1S2 (Canada)
Description
Single-phase vanadium dioxide (VO2) thin films have been grown on Si3N4/Si substrates by means of a well-controlled magnetron sputtering process. The deposited VO2 films were found to exhibit a semiconductor-to-metal transition (SMT) at ∼69 deg. C with a resistivity change as high as 3.2 decades. A direct and clear-cut correlation is established between the SMT characteristics (both amplitude and abruptness of the transition) of the VO2 films and their crystallite size
Additional details
Identifiers
- DOI
- 10.1063/1.2001139;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 5
- Journal Page Range
- p. 051910-051910.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017645
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; GRAIN SIZE; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SPUTTERING; SUBSTRATES; THIN FILMS; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; MATERIALS; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SIZE; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics