Published 1991 | Version v1
Book

Planar S/N/S Josephson junctions using multi-layer Bi system

  • 1. Central Research Lab., Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570 (Japan)

Description

This paper reports on planar S/N/S Josephson junctions that were fabricated by multi- layered thin films of Bi-based high-Tc oxide superconductors. Two Bi2Sr2Ca1Cu2Ox films and Bi2Sr2Cu1Oy film were successively layered as superconducting electrodes and normal conducting buffer layer, respectively. These films were epitaxially deposited on (100) MgO substrate by in-situ process of RF magnetron sputtering. Micro junction areas were defined by photo-lithography and Ar ion milling. These S/N/S type junctions clearly exhibited the AC Josephson effect under the irradiation of radio frequency wave of 12 GHz. More than 20th Shapiro steps were observed and those step heights were oscillated according to the irradiation power. These characteristics were stable and reproducible for different configuration of junction area

Additional details

Publishing Information

Publisher
Society of Petroleum Engineers.
Imprint Place
Richardson, TX (United States)
ISBN
0-8194-0463-2
Imprint Title
Progress in high-temperature superconducting transistors and other devices
Imprint Pagination
284 p.
Journal Page Range
p. 79-88.

Conference

Title
Society of Photo-Optical Instrumentation Engineers (SPIE) conference on progress in high temperature superconducting transistors and other devices.
Dates
30 Sep - 5 Oct 1990.
Place
Santa Clara, CA (United States).

Optional Information

Secondary number(s)
CONF-9009173--.