Planar S/N/S Josephson junctions using multi-layer Bi system
Creators
- 1. Central Research Lab., Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570 (Japan)
Description
This paper reports on planar S/N/S Josephson junctions that were fabricated by multi- layered thin films of Bi-based high-Tc oxide superconductors. Two Bi2Sr2Ca1Cu2Ox films and Bi2Sr2Cu1Oy film were successively layered as superconducting electrodes and normal conducting buffer layer, respectively. These films were epitaxially deposited on (100) MgO substrate by in-situ process of RF magnetron sputtering. Micro junction areas were defined by photo-lithography and Ar ion milling. These S/N/S type junctions clearly exhibited the AC Josephson effect under the irradiation of radio frequency wave of 12 GHz. More than 20th Shapiro steps were observed and those step heights were oscillated according to the irradiation power. These characteristics were stable and reproducible for different configuration of junction area
Additional details
Publishing Information
- Publisher
- Society of Petroleum Engineers.
- Imprint Place
- Richardson, TX (United States)
- ISBN
- 0-8194-0463-2
- Imprint Title
- Progress in high-temperature superconducting transistors and other devices
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 79-88.
Conference
- Title
- Society of Photo-Optical Instrumentation Engineers (SPIE) conference on progress in high temperature superconducting transistors and other devices.
- Dates
- 30 Sep - 5 Oct 1990.
- Place
- Santa Clara, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23056804
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH COMPOUNDS; ETCHING; FABRICATION; HIGH-TC SUPERCONDUCTORS; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; LAYERS; MAGNESIUM OXIDES; MAGNETRONS; RADIOWAVE RADIATION; RF SYSTEMS; SPUTTERING; SUBSTRATES; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MAGNESIUM COMPOUNDS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTORS
Optional Information
- Secondary number(s)
- CONF-9009173--.