Effect of chlorine implantation on phosphorus predeposition in silicon

Phosphorus predepositions are performed at 920 and 1000 0C on (100) silicon wafers, previously implanted with chlorine doses ranging from 5 x 1013 to 1 x 1016 cm-2. From the comparison with unimplanted specimens, it is observed that chlorine reduces the concentration of silicon interstitials produced by the doping process. This reduction results in a shallowing of the high diffusivity tail of the carrier profile and in preventing the formation of interstitial-type dislocations. (author)