Published 1988 | Version v1
Book Metadata-only

Time resolved photoluminescence of Yb IN InP

Creators

  • 1. Naval Research Lab., Washington, DC (USA)

Description

Time resolved photoluminescence (PL) measurements of the internal 4f-4f transitions of Yb/sup 3+/ have been carried out in InP and GaP. In InP a nonexponential component is observed in the PL decay, and is interpreted in terms of carrier capture by nonequilibrium Yb/sup 3+/. At low temperatures the exponential component is found to be much faster (∼ 12.5 μsec) than expected, and is tentatively associated with a weak coupling to resonant valence band states. As the temperature is increased, the PL intensity and the exponential component of the excited state lifetime are quenched with a thermal activation energy of ∼0.1 eV. This is interpreted as being due to the emission of a hole into the valence band by the neutral Yb acceptor

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
0-931837-72-3
Imprint Title
Defects in electronic materials
Journal Page Range
p. 437-442.

Conference

Title
Symposium on defects in electronic materials.
Dates
30 Nov - 1 Dec 1987.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20068045
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACTIVATION ENERGY; EV RANGE; EXCITATION; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TIME RESOLUTION; VALENCE; YTTERBIUM COMPOUNDS
Descriptors DEC
EMISSION; ENERGY; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; RARE EARTH COMPOUNDS; RESOLUTION; TIMING PROPERTIES