Local excitations in the conduction band of xenon crystal

The basic characteristics of the luminescence band with Emax = 2 eV (band A) are studied comprehensively as a function of temperature, impurity concentration, lattice structure perfection and irradiation dose. The band A parameters are compared with similar parameters of free excitons, localized holes Xe2+* and impurity centers Xe2O*, whose bands were detected concurrently. The photoexcitation spectra and time-resolved spectra of the band A luminescence are also analyzed. Radiation of similar structure with Emax = 2,05 eV was also observed in binary crystals Ar + Xe at high (∼ 10%) xenon concentrations. The conclusion is drawn that the observed luminescence originates from the intrinsic excited molecular type states localized in the bulk of the crystal and having energies within the conduction band close to 10 eV