Published September 26, 2007
| Version v1
Journal article
Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering Techniques
- 1. Freescale Semiconductor, STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France)
- 2. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France)
- 3. Jordan Valley, Zone 6 Ramat Graviel, Industrial zone, Migdal Ha'Emek 23100 (Israel)
- 4. CEA/LETI-MINATEC, 17 rue des martyrs, 38000 Grenoble (France)
Description
The automated metrology tool, combining X-ray reflectivity XRR and small-angle X-ray scattering SAXS has been demonstrated as a capable equipment to assess standard porous Ultra low-κ (ULK) metrology. Therefore those techniques have enabled characterizations of several ULK used in sub-65 nm nodes integration. Standard ULK material for 65 nm node technology has been monitored through the whole C065 integration steps using those combined techniques
Additional details
Identifiers
- DOI
- 10.1063/1.2799395;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 931
- Journal Issue
- 1
- Journal Page Range
- p. 347-351
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 2007 international conference on frontiers of characterization and metrology
- Dates
- 27-29 Mar 2007
- Place
- Gaithersburg, MD (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39052929
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- POROUS MATERIALS; REFLECTION; REFLECTIVITY; SMALL ANGLE SCATTERING; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; MATERIALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SCATTERING; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2007 American Institute of Physics