Production rates of complex defects in electron irradiated silicon

80 Ω cm N type Fz silicon and 12 Ω cm P type Fz silicon wafers were irradiated with 7 MeV electrons up to a total fluence of 3.7 x 1022 e/cm2. Charge carrier concentrations were obtained from 4-point probe resistivity measurements. Atomic displacements concentrations were calculated for each stage of irradiation. Fitting charge carrier concentration curves calculated from the generation recombination model to experimental points as a function of atomic displacements concentration, we estimated the fractions of atomic displacements which participate in the formation of deep-level complexes. These fractions are considered independent of charge carrier and atomic displacements concentrations, and proportional to the production rates of deep-level complexes for the corresponding electron energy. (Author)