Published 2017
| Version v1
Journal article
Growth and characterization of organic layers deposited on porous-patterned Si surface
- 1. V.Lashkarev Institute of Semiconductors Physics, NAS of Ukraine, 45, Prospekt Nauki, 03028, Kyiv (Ukraine)
- 2. Chair of Experimental Physics, Faculty of Mathematics and Natural Sciences , University of Rzeszow, S. Pigonia 1, 35-959 Rzeszow (Poland)
Description
The organic layers with the thickness from a few nanometers up to few micrometers have been deposited from the chemical solution at room temperature on porous patterned Si surfaces using two medical solutions: thiamine diphosphide (pH=1÷2) and metamizole sodium (pH=6÷7). Based on evolution of morphology, structural and compositional features obtained by scanning electron microscopy, X-ray analysis, reflectance high energy electron diffraction the grown mechanisms in thin organic layers are discussed in the terms of terrace-step-kink model whereas self-organized assemblies evaluated more thick layers. Transport mechanism features and possible photovoltaic properties are discussed on the base of differential current-voltage characteristics.
Availability note (English)
Available from http://www.epj-conferences.org/articles/epjconf/pdf/2017/02/epjconf_icsenob2017_01003.pdf; https://doaj.org/article/9d3ff92c431e4f74afb6ce4f81944d4e; http://dx.doi.org/10.1051/epjconf/201713301003Additional details
Identifiers
Publishing Information
- Journal Title
- EPJ. Web of Conferences
- Journal Volume
- 133
- Journal Page Range
- 01003 p.
- ISSN
- 2100-014X
Conference
- Title
- International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors
- Acronym
- IC SeNOB 2016
- Dates
- 22-25 May 2016
- Place
- Rzeszow (Poland)
INIS
- Country of Publication
- France
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48036714
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; DEPOSITS; ELECTRON DIFFRACTION; LAYERS; PHOTOVOLTAIC EFFECT; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACES; TEMPERATURE RANGE 0273-0400 K; X RADIATION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; PHOTOELECTRIC EFFECT; RADIATIONS; SCATTERING; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2017 The Authors. Published by EDP Sciences