Published January 1991
| Version v1
Miscellaneous
Open
Modelling of positron annihilation in presence of defects in semiconductors
Description
Published in summary form only
Files
23061449.pdf
Files
(50.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:e3d417f4e410b0da8ea1c8ca2ef7dd2f
|
50.3 kB | Preview Download |
Additional details
Publishing Information
- Publisher
- Department of Atomic Energy.
- Imprint Place
- Bombay (India)
- Imprint Title
- Proceedings of the solid state physics symposium held at Bombay during January 1-4, 1991. Vol. 33C
- Imprint Pagination
- 511 p.
- Journal Page Range
- p. 403.
- Report number
- INIS-mf--13208
Conference
- Title
- Solid state physics symposium.
- Dates
- 1-4 Jan 1991.
- Place
- Bombay (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 23061449
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNIHILATION; LIFETIME; MATHEMATICAL MODELS; POSITRONS; SEMICONDUCTOR MATERIALS; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; INTERACTIONS; LEPTONS; MATERIALS; MATTER; PARTICLE INTERACTIONS; POINT DEFECTS