Published November 1, 2019
| Version v1
Journal article
Spectroscopy of defects in CdZnTe structures
Creators
- 1. Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio av. 3, LT-10257 Vilnius (Lithuania)
- 2. Riga Technical University, 3 Paula Valdena str., LV-1048 Riga (Latvia)
Description
In this work, several spectral techniques such as pulsed and steady-state photo-ionization spectroscopy, deep level transient spectroscopy and infra-red steady-state photoluminescence spectroscopy have been combined to reveal and clarify the prevailing defects in cadmium zinc telluride (CZT) materials and device structures. The room temperature measurements were routinely performed to correspond with operation conditions of the CZT devices. The spectra recorded by the contactless and contact techniques have been compared to clarify the role of defects residing in bulk and near-contact regions. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6641/ab4782Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 34
- Journal Issue
- 11
- Journal Page Range
- [9 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52037518
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM; CDZNTE SEMICONDUCTOR DETECTORS; COMPARATIVE EVALUATIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; IONIZATION; PHOTOLUMINESCENCE; TELLURIDES; ZINC
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; EMISSION; EVALUATION; LUMINESCENCE; MEASURING INSTRUMENTS; METALS; PHOTON EMISSION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SPECTROSCOPY; TELLURIUM COMPOUNDS