Published November 1, 2019 | Version v1
Journal article

Spectroscopy of defects in CdZnTe structures

  • 1. Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio av. 3, LT-10257 Vilnius (Lithuania)
  • 2. Riga Technical University, 3 Paula Valdena str., LV-1048 Riga (Latvia)

Description

In this work, several spectral techniques such as pulsed and steady-state photo-ionization spectroscopy, deep level transient spectroscopy and infra-red steady-state photoluminescence spectroscopy have been combined to reveal and clarify the prevailing defects in cadmium zinc telluride (CZT) materials and device structures. The room temperature measurements were routinely performed to correspond with operation conditions of the CZT devices. The spectra recorded by the contactless and contact techniques have been compared to clarify the role of defects residing in bulk and near-contact regions. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/ab4782

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
34
Journal Issue
11
Journal Page Range
[9 p.]
ISSN
0268-1242
CODEN
SSTEET