White organic light-emitting devices with high color purity and stability
- 1. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000 (China)
Description
A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm−2 at the applied voltage of 13.4 V and Commission International de 1′Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu′v′ = 0.0119) when the current density increases from 10 to 100 mA cm−2. It reveals that the emissive dopant Rb acts as charge traps to improve electron–hole balance, provides sites for electron–hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/29/4/045026Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- [6 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46083659
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTHRACENE; CHARGE CARRIERS; COLOR; COORDINATES; CURRENT DENSITY; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; FLUORESCENCE; HOLES; IMPURITIES; LAYERS; LIGHT EMITTING DIODES; MONOCHROMATIC RADIATION; RECOMBINATION; STABILITY; TRAPPING; VISIBLE RADIATION
- Descriptors DEC
- AROMATICS; CONDENSED AROMATICS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; EMISSION; FERMIONS; HYDROCARBONS; LEPTONS; LUMINESCENCE; MATERIALS; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; ORGANOLEPTIC PROPERTIES; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES