Published August 16, 1987
| Version v1
Journal article
Electron radiation effects on GaAs MESFETs
Description
The effects of low dose electron irradiation on the electrical characteristics of a 0.5 μm commercial low noise GaAs MESFET are evaluated. The dc characteristics, low frequency transconductance, and photoresponse are determined. The radiation induced changes are described and discussed. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 102
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 843-848
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 19006670
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CARRIER DENSITY; DECOMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INTERFACES; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; TRAPS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHEMICAL REACTIONS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; LEPTON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS