Published September 1997
| Version v1
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Condition and prospects of investigations of radiation physical phenomena in silicon doped by transition elements
Description
Given report employed to light up separate achievements in investigations of electrophysical and radiation phenomena in semiconductors, in particular, in wide used silicon in modern science and engineering. In review the prospects of further researches on given problem are discussed. (A.A.D.)
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29000630.pdf
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Additional details
Publishing Information
- Imprint Title
- Abstracts of the second Uzbekistan conference on modern problems of nuclear physics
- Imprint Pagination
- 196 p.
- Journal Page Range
- p. 129.
- Report number
- INIS-UZ--040
Conference
- Title
- 2. Uzbekistan conference on modern problems of nuclear physics.
- Dates
- 9-12 Sep 1997.
- Place
- Samarkand (Uzbekistan).
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29000630
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SILICON; TRANSITION ELEMENTS
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; METALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS