Generation of cold electrons in the downstream region of a microwave plasma source with near boundary resonances for production of negative ions
- 1. Dept. of Physics, Indian Institute of Technology, Kanpur (India)
- 2. Institute for Plasma Research, Gandhinagar (India)
Description
A microwave driven multicusp plasma based volume negative ion source equipped with a magnetic filter is developed. Instead of employing any electrodes or current carrying filaments, microwaves of frequency 2.45 GHz is used to generate plasma by resonance heating mechanisms namely the electron cyclotron resonance (ECR) and upper hybrid resonances (UHR), occurring near the boundary plasma layers. The principal process of negative ion production in hydrogen is dissociative attachment of low energy (0.5-1.0 eV) electrons to vibrationally excited neutral molecules generated from high energy (15-20 eV) electron impact. The source therefore necessitates two distinct spatial regions (a) production and (b) attachment chambers; which would contain electrons with optimum cross section for the aforementioned processes. A biased grid after the magnetic filter further helps to lower down the electron temperature to ≤1 eV which is favorable for the dissociative attachment process. (author)
Additional details
Publishing Information
- Journal Title
- Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science
- Journal Volume
- 85
- Journal Issue
- 12
- Journal Page Range
- p. 1871-1878
- CODEN
- IJPYAS
Conference
- Title
- national conference on advances in atomic, molecular and nuclear physics
- Acronym
- NCAAMNP
- Dates
- 5-7 Nov 2009
- Place
- Ghaziabad (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 43064973
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BOUNDARY LAYERS; ELECTRON CYCLOTRON-RESONANCE; MICROWAVE HEATING; PLASMA; PLASMA BEAM INJECTION; SPATIAL DISTRIBUTION
- Descriptors DEC
- BEAM INJECTION; CYCLOTRON RESONANCE; DISTRIBUTION; HEATING; LAYERS; RESONANCE
Optional Information
- Notes
- 14 refs., 7 figs.