Published December 2011 | Version v1
Journal article

Generation of cold electrons in the downstream region of a microwave plasma source with near boundary resonances for production of negative ions

  • 1. Dept. of Physics, Indian Institute of Technology, Kanpur (India)
  • 2. Institute for Plasma Research, Gandhinagar (India)

Description

A microwave driven multicusp plasma based volume negative ion source equipped with a magnetic filter is developed. Instead of employing any electrodes or current carrying filaments, microwaves of frequency 2.45 GHz is used to generate plasma by resonance heating mechanisms namely the electron cyclotron resonance (ECR) and upper hybrid resonances (UHR), occurring near the boundary plasma layers. The principal process of negative ion production in hydrogen is dissociative attachment of low energy (0.5-1.0 eV) electrons to vibrationally excited neutral molecules generated from high energy (15-20 eV) electron impact. The source therefore necessitates two distinct spatial regions (a) production and (b) attachment chambers; which would contain electrons with optimum cross section for the aforementioned processes. A biased grid after the magnetic filter further helps to lower down the electron temperature to ≤1 eV which is favorable for the dissociative attachment process. (author)

Additional details

Publishing Information

Journal Title
Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science
Journal Volume
85
Journal Issue
12
Journal Page Range
p. 1871-1878
CODEN
IJPYAS

Conference

Title
national conference on advances in atomic, molecular and nuclear physics
Acronym
NCAAMNP
Dates
5-7 Nov 2009
Place
Ghaziabad (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
43064973
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BOUNDARY LAYERS; ELECTRON CYCLOTRON-RESONANCE; MICROWAVE HEATING; PLASMA; PLASMA BEAM INJECTION; SPATIAL DISTRIBUTION
Descriptors DEC
BEAM INJECTION; CYCLOTRON RESONANCE; DISTRIBUTION; HEATING; LAYERS; RESONANCE

Optional Information

Notes
14 refs., 7 figs.