Simulation of growth process and control of silicon nano particle's formation in dust plasma

A physical model is proposed for the growth of silicon nanoparticles in the form based on the Mott-Gurney scheme. The concept of the formation of silicon nanoparticles from monosilane was developed, taking into account charge exchange and growth arrest. Silicon nanoparticles were grown in dust plasma at various pressures of monosilane. It is shown that the dependence of the particle size on the pressure of monosilane confirms the validity of the proposed concept. (authors)