Study of solubility and analysis of behaviour of amphoteric impurities (Ge, Si) in indium antimonide

Systematic investigations on germanium and silicon solubility in indium antimonide at different temperatures are carried out. On the basis of data on measuring Hall effect it is shown that in the strong alloying region germanium and silicon being am.ohoteric impurities communicate to the material p-type of conductivity which indicates the dominating role of acceptor states as compared with the donor ones. It has been found that in the investigated concentrations range the donor states relation to the acceptor ones during germanium and silicon alloying is equal to 0.9 and 0.7, respectively. The mechanism of germanium and silicon amphoteric impurities arrangement is explained on the basis of representations on donor-acceptor interaction in conformity to taking place - in various sublattices of indium antimonide structure and on generation of multiple-charge vacancies shifting the Fermi level to the top of valent zone