Diagnostic of semiconductor device structures by spin-labeled electrons

The influence of non-uniform distribution of spin density in the temperature range from 5 to 80 K under the conditions of optical orientation of electrons in semiconductors is analyzed. Possibility to determine the kinetic parameters of carriers by depolarization of recombination radiation in a magnetic field is shown. Electron diffusion length and mobility is defined for materials with a hole conductivity. An estimated value of the rate of recombination on a free surface and its influence on the distribution of the concentration of non-equilibrium electrons from the excitation surface into the bulk is presented. (paper)