Published 1991 | Version v1
Book

Growth of oxide superconducting thin films by plasma-enhanced MOCVD

  • 1. Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185 (Japan)

Description

In this paper the effects of plasma- enhancement on MOCVD for growing superconducting YBa2Cu3Ox thin films is studied. It is revealed that plasma-enhancement accelerates crystallization of YBa2Cu3Ox so that growth temperatures of superconducting films can be decreased by about 150 degrees C. Thin films grown by plasma-enhanced MOCVD at 515 degrees C and 580 degrees C indicate zero-resistivity temperatures of 60K and 84K, respectively. Critical current density in the film grown by plasma-enhanced MOCVD at 580 degrees C is 105 A/cm2 at 77K. Infrared absorption spectroscopy and ultraviolet and visible emission spectroscopy clarify that plasma excite the metalorganic compounds and that this excitation promotes oxidation of metalorganic compounds and crystallization of YBa2Cu3Ox

Additional details

Publishing Information

Publisher
Society of Petroleum Engineers.
Imprint Place
Richardson, TX (United States)
ISBN
0-8194-0463-2
Imprint Title
Progress in high-temperature superconducting transistors and other devices
Imprint Pagination
284 p.
Journal Page Range
p. 238-243.

Conference

Title
Society of Photo-Optical Instrumentation Engineers (SPIE) conference on progress in high temperature superconducting transistors and other devices.
Dates
30 Sep - 5 Oct 1990.
Place
Santa Clara, CA (United States).

Optional Information

Secondary number(s)
CONF-9009173--.