Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO2 dilute magnetic semiconductors
- 1. State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Description
According to density functional theory (DFT) using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy (VO) in a (Ti,Co)O6 distorted octahedron on the spin density and magnetic properties of Co-doped rutile TiO2 dilute magnetic semiconductors. Our calculations suggest that the VO location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the VO is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6(t32g ↑,t32g ↓) without any magnetic moment. However, if the VO is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of VO. Some positive spin polarization is induced around the adjacent O ions. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/21/4/047503Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 21
- Journal Issue
- 4
- Journal Page Range
- [8 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45026655
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CATIONS; COUPLING; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; GROUND STATES; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; OXYGEN; OXYGEN IONS; POTENTIALS; RUTILE; SPIN; SPIN ORIENTATION; TITANIUM OXIDES; VACANCIES; WAVE PROPAGATION
- Descriptors DEC
- ANGULAR MOMENTUM; CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; IONS; MATERIALS; MINERALS; NONMETALS; ORIENTATION; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; POINT DEFECTS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SEMICONDUCTOR MATERIALS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS