Charge collection measurements on slim-edge microstrip detectors

We have generated slim edges on manufactured silicon strip detectors by cleaving the non-active edge material and passivating the very smooth edge with a thin coat of silicon oxide. We report a comparison of I-V measurements and charge collection and noise measurements on two identical sensors, one with and one without slim edge treatment. The current voltage measurements of the entire sensor and individual strips indicate that the large current increase due to the treatment is confined to the guard ring, while the strips show essentially no increase in leakage currents. The noise on all strips, including the one adjacent to the slim edge, is not changed by the cut. The signal from a beta source before and after cutting is the same within 4%.