Growth of the conducting polymer polythiophene on semiconducting substrates and its application to the fabrication of energy conversion devices
Creators
- 1. C.N.R.S., Lab. de Photochimie Solaire, 2-8 rue Henri Dunant, F-94320 Thiais (France)
Description
Derivatives of polythiophene (PT) are organic polymers that can be electrochemically grown over metallic or semiconducting substrates. Their conductivity can be easily tuned over more than ten orders of magnitude, by chemical or electrochemical treatments. Furthermore, they are environmentally stable in both their oxidized (conducting) and neutral (semiconducting) states. The electrodeposition of PT on an n-type semiconducting substrate like GaAs or CdS was carried out in a classical three-electrode electrochemical setup. Illumination of the semiconductor electrode was necessary in order to get the anodic current required for the electropolymerization. As the polymer grows at a relatively high potential (greater than ca. 1 V/sce), photocorrosion of the semiconductor inevitably occurs even in an organic solvent like acetonitrile. The competition between corrosion and polymerization prevents the formation of the polymer. One way to overcome this problem is the pre-deposition of a catalytic layer in order to enhance the polymerization process. This was done for instance on n-GaAs by electroreduction of hexachloroplatinate in an aqueous solution at a potential of -0.6 V/sce. Very low amounts of platinum (less than a monolayer) were sufficient to allow the subsequent formation of very adhesive and homogeneous PT coverages
Additional details
Publishing Information
- Publisher
- The Electrochemical Society.
- Imprint Place
- Pennington, NJ (USA)
- Imprint Title
- Proceedings of the 1987 Electrochemical Society spring meeting: Extended abstracts. Volume 87-1
- Journal Page Range
- p. 481.
Conference
- Title
- 171. Electrochemical Society meeting.
- Dates
- 10-15 May 1987.
- Place
- Philadelphia, PA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20071535
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACETONITRILE; AQUEOUS SOLUTIONS; CADMIUM SELENIDES; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODEPOSITION; FABRICATION; GALLIUM ARSENIDES; HETEROCYCLIC COMPOUNDS; N-TYPE CONDUCTORS; ORGANIC SOLVENTS; PLATINUM; POLYMERIZATION; POLYMERS; REDUCTION; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; DEPOSITION; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTROLYSIS; ELEMENTS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; MATERIALS; METALS; MIXTURES; NITRILES; NONAQUEOUS SOLVENTS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SOLUTIONS; SOLVENTS; SURFACE COATING; TRANSITION ELEMENTS