Influence of uniaxial elastic deformation on mobility of carriers of the current in monocrystals n-Si in the presence of deep energetic levels

A lot of works are dedicated to an influence of uniaxial elastic deformation on change of mobility of carriers of a current in semiconductors, but in the literature there are few data on features of dependence of mobility from mechanical pressure in the presence of deep energetic levels in the forbidden zone of the semiconductor. For studying of influence of deep power levels on electrophysical properties many-valleys semiconductors monocrystals n-Si ( ρ300 =30 Ohm·cm) with initial concentration of the ne=1,24·1014 cm-3 irradiated gamma-quanta Co 60 a dose 1,9·1017 cm-2 were investigated. The irradiation dose got out such that on temperature dependence of concentration of carriers of a current energetic level EC-0,17 eV was accurately shown that belongs to the A-centre (a complex of vacancy with interstitial atom of oxygen). On rectilinear inclinations of recession of curves lnρ=f(X) it is possible to define size of change of a energetic backlash between deep level EC-0,17 eV. Experimental results, are processed on the given method, have shown that dependence μ/μ0 at the big pressure X leaves on saturation. It speaks full resettlement of carriers of a current from four valleys that rise, in two valleys which fall at deformation in n-Si for X//J//[100] . Deep level EC-0,17 eV will exchange current carriers only with two valleys which will define concentration and mobility of carriers of a current in n-Si at strong uniaxial deformations. (authors)