Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays
Creators
- 1. Freie Universitaet Berlin, Berlin (Germany)
- 2. Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)
Description
Solar cells with Cu2ZnSnS4 absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from CuxSnSy nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO2 coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of X-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed. - Highlights: ► CuxSnSy nanoparticles are deposited on ZnO nanorod arrays. ► Samples are annealed at different temperatures (300–550 °C) in Se/Ar-atmosphere. ► Raman spectroscopy, X-ray diffraction and electron microscopy are performed. ► ZnO disappears with increasing annealing temperature. ► With increasing temperature CuxSnSy and ZnO form Cu2ZnSn(S,Se)4
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2012.10.124Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2012.10.124;
- PII
- S0040-6090(12)01453-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 535
- Journal Page Range
- p. 380-383
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46084730
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DEPOSITS; DOPED MATERIALS; EFFICIENCY; ELECTRODEPOSITION; FLUORINE; GLASS; NANOPARTICLES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SELENIUM; SOLAR CELLS; SUBSTRATES; THIN FILMS; TIN OXIDES; TOLUENE; TOXICITY; X-RAY DIFFRACTION; ZINC; ZINC OXIDES
- Descriptors DEC
- ALKYLATED AROMATICS; AROMATICS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; DIRECT ENERGY CONVERTERS; ELECTROLYSIS; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FILMS; HALOGENS; HEAT TREATMENTS; HYDROCARBONS; LASER SPECTROSCOPY; LYSIS; MATERIALS; METALS; MICROSCOPY; NONMETALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SCATTERING; SEMIMETALS; SOLAR EQUIPMENT; SPECTROSCOPY; SURFACE COATING; TIN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.