Photoluminescence efficiency recovery due to enhanced annealing of radiation defect in p-type InP by photogenerated carrier recombination

Photoluminescence efficiency recovery in 1-MeV electron irradiated InP due to photon excitation is demonstrated. Photoluminescence intensity recovers with incident excitation power in an exponential-like manner and its recovery rate increases when temperature rises. These phenomena are explained via the recovery of the minority carrier diffusion length which is degraded through recombination center introduction by electron irradiation. Temperature dependence of recovery rate is quite similar to that of annealing rate of a dominant hole trap named H4 and recombination enhanced annealing of this defect is responsible for photoluminescence recovery