Slip transmission assisted by Shockley partials across α / β interfaces in Ti-alloys

Slip transmission across $\alpha /\beta$ interfaces is of great significance in understanding the strength of Ti-alloys, but currently a detailed mechanistic understanding of the process is still lacking. Here we develop a microscopic phase-field framework that incorporates the generalized stacking fault energy and the interface crystallography, which are, respectively, calculated by atomistic methods and revealed by crystallographic theories of phase transformations and experimental characterization. The model is then applied to studying the transmission of a constant flux of discrete dislocations across multiple $\alpha /\beta$ interfaces at micron-scale. The simulations predict interesting slip transmission mechanisms that have not been reported before, wherein Shockley partials play a critical role in assisting the dislocation transfer across the interfaces. The dislocation configurations generated by these mechanisms seem to agree well with experimental characterizations. Spatial cross-over between full dislocations in α is also seen from the simulations, which is again attributed to a reaction mechanism involving Shockley partials. A parametric study further reveals that stacking fault energy can influence the slip transmission in terms of transmitted dislocation types, transmission rate, and the residual dislocation content, suggesting a new strengthening strategy at the $\alpha /\beta$ interface level. This work offers new understanding of the complex slip transmission process in Ti-alloys and demonstrates a new computational tool complementary to advanced electron microscopy analysis of plastic deformation.