Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography
Description
The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)
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Additional details
Additional titles
- Original title (French)
- Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes
Publishing Information
- Imprint Pagination
- 169 p.
- Report number
- FRCEA-TH--757
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 31040767
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; COMPUTERIZED TOMOGRAPHY; IMAGE SCANNERS; TRAPS; X-RAY DETECTION
- Descriptors DEC
- DETECTION; DIAGNOSTIC TECHNIQUES; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TOMOGRAPHY