Published 2006 | Version v1
Miscellaneous

Simulation of ion beam doping of silicon-on-sapphire heterostructure by means of Monte Carlo method with taking into account of dislocation structure

  • 1. FGUP FNPTs NII Izmeritel'nykh Sistem im. Yu.E. Sedakova, Nizhnij Novgorod (Russian Federation)

Description

no abstract available

Part of:
Abstracts of reports of XXXVI International conference on physics of charged particle - crystal interaction

Additional details

Additional titles

Original title (Russian)
Моделирование процесса ионно-лучевого легирования гетерокомпозиции кремний на сапфире методом Монте-Карло с учетом влияния дислокационной структуры

Publishing Information

Publisher
MGU im. M.V. Lomonosova
Imprint Place
Moscow (Russian Federation)
Imprint Title
Abstracts of reports of XXXVI International conference on physics of charged particle - crystal interaction
Imprint Pagination
172 p.
Journal Page Range
p. 146
Report number
INIS-RU--494

Conference

Title
36. International conference on physics of charged particle - crystal interaction
Original Conference Title
XXXVI Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
30 May - 1 Jun 2006
Place
Moscow (Russian Federation)

Optional Information

Notes
2 refs. Imprint:Tezisy dokladov XXXVI Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami