Published April 1997 | Version v1
Journal article

An improvement of surface smoothness and lattice match of CeO2 buffer layers on R-sapphire processed by MOCVD

  • 1. Moskovskij Gosudarstvennyj Univ., Moscow (Russian Federation). Khimicheskij Fakul'tet
  • 2. Department of Physics, Moscow State University, 119899, Moscow (Russian Federation)
  • 3. Nat. Center for HREM, Delft TU, Rotterdamsweg 137, 2628 AL, Delft (Netherlands)
  • 4. The Florida State University, Department of Chemistry, Tallahassee, FL 32306-3006 (United States)

Description

Epitaxial thin films of CeO2 and Ce1-xRxO2-y (R=Y, Nd; x=0-0.32) on R-sapphire were prepared by band flash evaporation MOCVD. It was demonstrated that the smoothness of the films can be improved by a decrease of deposition rate and by post deposition annealing at 1000 C. The lattice match of buffer layers with R-Al2O3 and YBa2Cu3O7-δ was improved by doping of ceria with yttrium and neodymium correspondingly. A bilayer structure Ce0.7Nd0.3O2-y/Ce0.68Y0.32O2-y/R-Al2O3 is proposed as potential substrate material for YBa2Cu3O7-δ deposition. (orig.)

Additional details

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
251
Journal Issue
1-2
Journal Page Range
p. 318-321.
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
Growth mechanisms - interfaces - multilayers as part of the spring meeting of the European Materials Research Society (E-MRS).
Acronym
Symposium F on high temperature superconductor thin films
Dates
4-7 Jun 1996.
Place
Strasbourg (France).