Published December 15, 2007
| Version v1
Journal article
Photocurrent spectroscopy of an Fe/Zn0.96Fe0.04S Schottky diode
Creators
- 1. Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
Description
Fe/Zn0.96Fe0.04S Schottky diode was grown by molecular beam epitaxy. The short-circuit DC photocurrent spectroscopy was measured at temperatures from 10 to 300 K. Anomalous photocurrent was observed at temperatures above 100 K when excitation photon energies were less than the band gap energy of Zn0.96Fe0.04S. We have explained this anomalous phenomenon based on the photo-ionization of acceptor-like interface states. We believe that these interface states are associated with some complex (Fe,S) defects formed at the Fe/ZnFeS interface. The transient behavior of photocurrent at various temperatures has also been studied
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2007.08.111Additional details
Identifiers
- DOI
- 10.1016/j.physb.2007.08.111;
- PII
- S0921-4526(07)00653-9;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 401-402
- Journal Page Range
- p. 48-50
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 24. International conference on defects in semiconductors
- Dates
- 22-27 Jul 2007
- Place
- Albuquerque, NM (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39051665
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; EXCITATION; INTERFACES; IONIZATION; IRON; IRON COMPLEXES; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTONS; SCHOTTKY BARRIER DIODES; SPECTROSCOPY; SULFUR COMPLEXES; SULFUR COMPOUNDS; SURFACES; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TRANSIENTS; ZINC COMPOUNDS
- Descriptors DEC
- BOSONS; COMPLEXES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EPITAXY; MASSLESS PARTICLES; METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPLEXES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.