A study on the crystallization behavior and electrical properties of BST thin films by self-buffering process

Ba0.5Sr0.5TiO3(BST) thin films were prepared on very thin buffer layer ( 10 nm) of the same BST by rf sputtering. The crystal orientation of the BST films was very dependent on the deposition rate of the buffer layer deposited at 700 .deg. C. As the deposition rate of the buffer layer decreases from 3.0 nm/min to 0.25 nm/min, the crystal orientation changed from (110) to (111), and the electrical properties, such as the dielectric constant or the leakage current, were greatly improved. The crystallization temperature was also lowered to 250 .deg. C