Published June 28, 1982 | Version v1
Journal article Metadata-only

Direct determination of sizes of excitations from optical measurements on ion-implanted GaAs

Creators

  • 1. Bell Laboratories, Murray Hill, New Jersey 07974

Description

Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16 A)2

Additional details

Publishing Information

Journal Title
Phys. Rev. Lett.
Journal Volume
48
Journal Issue
26
Series
Phys. Rev. Lett.
Journal Page Range
1863-1866
ISSN
0031-9007

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14725934
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
GALLIUM ARSENIDES; ION IMPLANTATION; MATHEMATICAL MODELS; OPTICAL PROPERTIES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES