Published 1999 | Version v1
Miscellaneous Open

Characterisation of amorphous silicon alloys by RBS/ERD with self consistent data analysis using simulated annealing

  • 1. Instituto Tecnologico e Nuclear, Sacavem, (Portugal)
  • 2. University of Surrey, Guilford, (United Kingdom). Ion Beam Centre
  • 3. South Bank University, London, (United Kingdom). School of Electrical, Electronic and Information Engineering

Description

Full text: Hydrogenated amorphous silicon films are deposited by CVD onto insulating (silica) substrates for the fabrication of solar cells. 1.5MeV 4He ERD/RBS is applied to the films, and a self consistent depth profile of Si and H using the simulated annealing (SA) algorithm was obtained for each sample. The analytical procedure is described in detail, and the confidence limits of the profiles are obtained using the Markov Chain Monte Carlo method which is a natural extension of the SA algorithm. We show how the results are of great benefit to the growers

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Part of:
The 11th Australian Conference on Nuclear Techniques of Analysis and the 5th Vacuum Society of Australia Congress. Proceedings

Additional details

Publishing Information

Imprint Place
Lucas Heights (Australia)
Imprint Title
The 11th Australian Conference on Nuclear Techniques of Analysis and the 5th Vacuum Society of Australia Congress. Proceedings
Imprint Pagination
310 p.
Journal Page Range
p. 281
Report number
INIS-AU--0043

Conference

Title
11. Australian Conference on Nuclear Techniques of Analysis; 5. Vacuum Society of Australia Congress
Dates
24-26 Nov 1999
Place
Lucas Heights, NSW (Australia)

INIS

Optional Information

Notes
Abstract only. 2 refs.