Published July 14, 2014
| Version v1
Journal article
Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures
Creators
- 1. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
- 2. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
- 3. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)
Description
Photoluminescence (PL) spectra and kinetics of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10–20 μm by placing such QWs in HgCdTe structures with waveguides.
Additional details
Identifiers
- DOI
- 10.1063/1.4890416;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 2
- Journal Page Range
- p. 022102-022102.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46017250
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM COMPOUNDS; CARRIERS; CRYSTAL DEFECTS; DECAY; DEPLETION LAYER; INJECTION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SPECTRA; SPECTROSCOPY; TELLURIUM COMPOUNDS; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION; TRAPS; WAVEGUIDES; WAVELENGTHS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EMISSION; EPITAXY; INTAKE; LAYERS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; RESOLUTION; TEMPERATURE RANGE; TIMING PROPERTIES
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC