Published July 14, 2014 | Version v1
Journal article

Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

  • 1. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
  • 2. Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
  • 3. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)

Description

Photoluminescence (PL) spectra and kinetics of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well (QW) heterostructures grown by molecular beam epitaxy technique are studied. Interband PL spectra are observed from 18 K up to the room temperature. Time resolved studies reveal an additional PL line with slow kinetics (7 μs at 18 K) related to deep defect states in barrier layers. These states act as traps counteracting carrier injection into QWs. The decay time of PL signal from QW layers is about 5 μs showing that gain can be achieved at wavelengths 10–20 μm by placing such QWs in HgCdTe structures with waveguides.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
2
Journal Page Range
p. 022102-022102.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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