Published August 2021 | Version v1
Journal article

Bound state energy of finger gate and top gate with consideration of Rashba-Dresselhaus-Zeeman effects

  • 1. Department of Mechanical Engineering, National United University, Lienda 2, Miaoli 360001 (China)
  • 2. Computer Engineering Department, Komar University of Science and Technology, Sulaimani 46001 (Iraq)
  • 3. Physics Department, College of Science, University of Sulaimani, Kurdistan Region (Iraq)
  • 4. Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland)

Description

Highlights: • The authors investigate the spin-resolved quantum transport with interplay of the Zeeman and the Rashba-Dresselhaus spin-orbit coupling effects. • The spin-resolved quantum transport is influenced by the bubble-like evanescent modes in the gap energy region and a ultra-low energy region induced by the Dresselhaus effect. • The bound-state analysis for the conductance structures influenced by the spin-orbit effect can be determined by a transcendental equation. The spintronic effect of quantum transport is investigated in a fully-depleted spin transistor. The analysis considers the Zeeman effect caused by an external planar magnetic field and the electron transport characteristics induced under Rashba-Dresselhaus spin-orbit coupling. A transcendental equation is proposed for predicting the bound state energies of the conductance structure produced under the strong Rashha-Desselhaus-Zeeman effect. It is shown that the proposed equation provides an accurate means of predicting the bound state energy as a function of the potential energy and top gate length.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2021.127447

Additional details

Identifiers

DOI
10.1016/j.physleta.2021.127447;
PII
S037596012100311X;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
407
Journal Page Range
vp.
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.