Published 1999
| Version v1
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stimulated diffusion of copper in semiconductors under the action of hydrogen atoms
Creators
- 1. Gosudarstvennyj Tekhnicheskij Univ., Zaporozh'e (Ukraine)
Description
no abstract available
Files
30050936.pdf
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Additional details
Additional titles
- Original title (Russian)
- Стимулированная диффузия меди в полупроводнихах под воздействием атомов водорода
Publishing Information
- Publisher
- Moskovskij Gosudarstvennyj Univ.
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Abstracts of the reports from the 29. International conference on physical aspects of charge particle interactions with crystals
- Imprint Pagination
- 139 p.
- Journal Page Range
- p. 138
- Report number
- INIS-RU--434
Conference
- Title
- 29. International conference on physical aspects of charged particle interactions with crystals
- Original Conference Title
- 29. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 31 May - 2 Jun 1999
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 30050936
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ANALYTICAL SOLUTION; COATINGS; COPPER; DIFFUSION; ENERGY YIELD; GERMANIUM; HIGH-FREQUENCY DISCHARGES; HYDROGEN; HYDROGEN IONS; MEDIUM VACUUM; RECOMBINATION; SEMICONDUCTOR MATERIALS; SUBSTRATES
- Descriptors DEC
- CHARGED PARTICLES; ELECTRIC DISCHARGES; ELEMENTS; IONS; MATERIALS; METALS; NONMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- Imprint:Tezisy dokladov 29. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami