Published 1991
| Version v1
Book
The Indiana silicon sphere (ISiS) 4 π detector
Creators
- 1. Indiana Univ., Bloomington (United States)
Description
A 4 π detector array for the study of multifragment emission processes in light-ion-induced reactions is described. The detector array is based on ion-implanted passivated silicon detector technology, combined with gas-ionization and CsI(T1) scintillator devices to measure light-charged particles up to 100 MeV/A and all heavier fragments with discrete Z identification up to Z ≤ 14. The design criteria include good granularity (162 elements), very low energy thresholds (0.1-0.2 MeV/A), excellent energy resolution and stability, broad dynamic range and ease of calibration
Additional details
Publishing Information
- Publisher
- American Chemical Society.
- Imprint Place
- Washington, DC (United States)
- Imprint Title
- American Chemical Society. Division of Nuclear Chemistry and Technology
- Imprint Pagination
- 30 p.
- Journal Page Range
- p. 10, Paper NUCL 36.
Conference
- Title
- 4. chemical congress of North America.
- Dates
- 25-30 Aug 1991.
- Place
- New York, NY (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24027495
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALIBRATION; DESIGN; FOUR-PI COUNTING; ION IMPLANTATION; LIGHT IONS; MEV RANGE 01-10; MEV RANGE 10-100; NUCLEAR FRAGMENTS; NUCLEAR REACTIONS; RADIATION DETECTORS; RESOLUTION; SCINTILLATION COUNTERS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CHARGED PARTICLES; COUNTING TECHNIQUES; ENERGY RANGE; IONS; MEASURING INSTRUMENTS; MEV RANGE; SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-9108101--.