Lattice curvature generation in graded InxGa1-xASGaAs buffer layers
- 1. INFM at the Physics Department, University of Padova, via Marzolo 8, 35131-I Padova (Italy)
- 2. INFM-TASC at Elettra Synchrotron, S.S.14 Km 163.5, 34012 Basovizza Trieste (Italy)
Description
Position dependent lattice tilts in InGaASGaAs(001) compositionally graded buffer layers are investigated. The lateral dependence of the tilt defines a concave buffer layer curvature of up to 3 deg cm-1. The buffer layer curvature is associated with a distribution of the misfit dislocation Burgers vectors that varies nearly linearly across the sample. The origin of this peculiar distribution is discussed and is explained in terms of a Burgers-vector selection rule, which governs the cross slip of gliding threading dislocations and that has been experimentally observed by Capano in Phys. Rev. B 45, 11 768 (1992). A quantitative model of lattice curvature formation is presented that satisfactorily accounts for the main features of the observed buffer layer curvature
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.62.11054;
- PII
- S0163-1829(00)00639-1;
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 62
- Journal Issue
- 16
- Journal Page Range
- p. 11054-11062
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35071688
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUFFERS; BURGERS VECTOR; DISLOCATIONS; DISTRIBUTION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LAYERS; SELECTION RULES; SLIP
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; LINE DEFECTS; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2000 The American Physical Society