Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission

We use a standard 8 × 8 envelope-function approximation (EFA) formalism taking into account the effect of anisotropic and other interface (IF) interactions to investigate the electronic and optical properties of short-period superlattice laser structures (InAs/GaSb/InSb)×N grown on a GaSb substrate. We find that the band gaps numerically calculated at different temperatures give a good fitting with the experimental data confirming the model used. The calculated modal gain demonstrates that it is possible to achieve lasing operation at room temperature for N  > 12 and for a reasonable total optical loss αt = 25 cm−1. Therefore, the 8 × 8 EFA formalism with IF design serves as a tool to model the optoelectronic properties of InAs/GaSb/InSb SPSLs