Highly efficient inverted organic light emitting diodes by inserting a zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite interfacial layer
- 1. Materials Institute, The Scientific and Technological Research Council of Turkey (TUBITAK)—Marmara Research Center (MAM), Gebze/Kocaeli, 41470 (Turkey)
- 2. Department of Physics, Gebze Technical University, Gebze/Kocaeli 41400 (Turkey)
Description
The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized. For orange-red emissive MEH-PPV based IBOLEDs, a high power efficiency of 6.1 lm W−1 at a luminance of 1000 cd m−2 has been achieved. Notably, the external quantum efficiency ( EQE ) increased from 0.1 to 4.8% and the current efficiency ( CE ) increased from 0.2 to 8.7 cd A−1 with rise in luminance ( L ) from 1000 to above 10 000 cd m−2 levels when compared to that of pristine ZnO-based devices. An identical device architecture containing a ZnO:PEI NC layer has also been used to successfully fabricate green and blue emissive IBOLEDs. The significant enhancement in the inverted device performance, in terms of luminance and efficiency, is attributed to a good energy-level alignment between the cathode/organic interface which leads to effective carrier balance, resulting in efficient radiative-recombination. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aa6f55Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 28
- Journal Issue
- 24
- Journal Page Range
- [10 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50043093
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- EMISSION; ENERGY LEVELS; INTERFACES; LAYERS; LIGHT EMITTING DIODES; NANOCOMPOSITES; QUANTUM EFFICIENCY; RECOMBINATION; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; EFFICIENCY; FILMS; MATERIALS; NANOMATERIALS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC COMPOUNDS