Crystal Growth with Flux Method and Characterization of CeRu${}_2$P${}_2$

CeRu${}_2$P${}_2$ is a rare-earth ternary phosphide with the tetragonal ThCr${}_2$Si${}_2$ type crystal structure. The electrical resistivity in $[$100$]$ direction of CeRu${}_2$P${}_2$ shows a broad maximum at T = 180 K and metallic behavior for lower temperatures, indicative of a slightly intermediate valent system, which was confirmed recently in RIXS measurements. Here, we report a crystal growth method for CeRu${}_2$P${}_2$. The single crystals have been grown in Sn-flux with temperatures up to 1500 °C. We have characterized the grown crystals with EDX and powder X-ray diffraction measurements. Furthermore, we present measurements of electrical resistivity, specific heat and magnetic susceptibility.