Published June 1991
| Version v1
Journal article
On role of ion cascade mixing for profiling of impurity profiles
- 1. Donetskij Gosudarstvennyj Univ., Donetsk (Ukraine)
Description
A diffusion model of cascade mixing has been applied to the problem of treating the results of profiling by ion beam. The calculation procedures are described for major model parameters: the cascade mixing coefficient, the range of mixing, the velocity of surface recession. It is shown that for impurity layers of Ti in Si the broading in more sufficient for the case of 1 keV Ne ion bombardment than for 1 keV Kr
Additional details
Additional titles
- Original title (Russian)
- О роли ионного каскадного перемешивания при послойном анализе примесных профилей
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.6
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 23016547
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; IMPURITIES; KEV RANGE 01-10; KRYPTON IONS; MIXING; NUMERICAL SOLUTION; PHYSICAL RADIATION EFFECTS; SILICON; SPUTTERING; STRUCTURAL CHEMICAL ANALYSIS; TITANIUM
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; RADIATION EFFECTS; SEMIMETALS; TRANSITION ELEMENTS