Published 2004
| Version v1
Miscellaneous
SIMS depth profile analysis of semiconductor laser structures with ultra-low energy Ar+ ion beam
Creators
- 1. Faculty of Physics, Warsaw University of Technology, Warsaw (Poland)
- 2. Industrial Institute of Electronics, Vacuum Technology Department, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- InAlGaAs/GaAs
Publishing Information
- Imprint Title
- Abstracts book of 8. Electron Technology Conference ELTE 2004
- Imprint Pagination
- 502 p.
- Journal Page Range
- p. 389-391
Conference
- Title
- 8. Electron Technology Conference ELTE 2004
- Dates
- 19-22 Apr 2004
- Place
- Stare Jablonki (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 37004055
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARGON IONS; ARSENIDES; BERYLLIUM ADDITIONS; DEPTH; DOPED MATERIALS; EROSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ION BEAMS; LAYERS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MONTE CARLO METHOD; SCANNING ELECTRON MICROSCOPY; SECONDARY BEAMS; SEMICONDUCTOR LASERS; SPATIAL DISTRIBUTION; SPUTTERING
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; BEAMS; BERYLLIUM ALLOYS; CALCULATION METHODS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DIMENSIONS; DISTRIBUTION; ELECTRON MICROSCOPY; EPITAXY; IONS; LASERS; MATERIALS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTROSCOPY
Optional Information
- Notes
- 3 refs, 2 figs